IXFN160N30T

IXFN160N30T - Gen1 Series

IXFN160N30T

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Specifications

Drain-Source Voltage (V): 300
Maximum On-Resistance @ 25 ℃ (Ohm): 0.0190
Continuous Drain Current @ 25 ℃ (A): 130
Gate Charge (nC): 376
Input Capacitance, CISS (pF): 24500
Thermal resistance [junction-case] (K/W): 0.138
Configuration: Single
Package Type: SOT-227
Power Dissipation (W): 900
Maximum Reverse Recovery (ns): 200
Sample capable: Yes
StockCheck: No

Dokumente

Data Sheet

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