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IXTH140P10T
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Beschreibung
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.- Part Number
- IXTH140P10T
- Erhalten Sie bis zu 90 Tage Zahlungsziele von 500+ Lieferanten
- Wiederverkaufsrabatte bis zu 40%!
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1
Zahlungsmöglichkeiten:
Specifications
- Drain-Source Voltage (V)
- -100
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.0100
- Continuous Drain Current @ 25 ℃ (A)
- -140
- Gate Charge (nC)
- 400
- Input Capacitance, CISS (pF)
- 32800
- Thermal resistance [junction-case] (K/W)
- 0.22
- Configuration
- Single
- Package Type
- TO-247
- Typical Reverse Recovery Time (ns)
- 130
- Power Dissipation (W)
- 568
- Sample capable
- No
- StockCheck
- No
Dokumente
Data Sheet
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