IXTT12N150

IXTT12N150 - High Voltage Series

IXTT12N150

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Specifications

Drain-Source Voltage (V): 1500
Maximum On-Resistance @ 25 ℃ (Ohm): 2.20
Continuous Drain Current @ 25 ℃ (A): 12.00
Gate Charge (nC): 106.0
Input Capacitance, CISS (pF): 3720
Thermal resistance [junction-case] (K/W): 0.14
Configuration: Single
Package Type: TO-268
Typical Reverse Recovery Time (ns): 1200
Power Dissipation (W): 890
Sample capable: No
StockCheck: No

Dokumente

Data Sheet

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