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IXFN520N075T2

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Opis

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.
Part Number
IXFN520N075T2
  • Termin płatności do 90 dni od 500+ dostawców.
  • Rabaty na odsprzedaż do 40%!
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Specifications

Drain-Source Voltage (V)
75
Maximum On-Resistance @ 25 ℃ (Ohm)
0.0019
Continuous Drain Current @ 25 ℃ (A)
480
Gate Charge (nC)
545
Input Capacitance, CISS (pF)
41000
Thermal resistance [junction-case] (K/W)
0.16
Configuration
Single
Package Type
SOT-227
Power Dissipation (W)
940
Sample capable
Yes
StockCheck
No

Dokumenty

Data Sheet

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