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IXFH70N30Q3

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Descrizione

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device.
Part Number
IXFH70N30Q3
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Specifications

Drain-Source Voltage (V)
300
Maximum On-Resistance @ 25 ℃ (Ohm)
0.054
Continuous Drain Current @ 25 ℃ (A)
70
Gate Charge (nC)
98
Input Capacitance, CISS (pF)
4735
Thermal resistance [junction-case] (K/W)
0.150
Configuration
Single
Package Type
TO-247
Power Dissipation (W)
830
Maximum Reverse Recovery (ns)
250
Sample capable
No
StockCheck
No

Documenti

Data Sheet

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