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IXTA48P05T

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Descrizione

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.
Part Number
IXTA48P05T
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Specifications

Drain-Source Voltage (V)
-50
Maximum On-Resistance @ 25 ℃ (Ohm)
0.0300
Continuous Drain Current @ 25 ℃ (A)
-48
Gate Charge (nC)
53
Input Capacitance, CISS (pF)
3660
Thermal resistance [junction-case] (K/W)
0.83
Configuration
Single
Package Type
TO-263
Typical Reverse Recovery Time (ns)
30
Power Dissipation (W)
150
Sample capable
No
StockCheck
No

Documenti

Data Sheet

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