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IXTH20P50P
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Descrizione
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications.- Part Number
- IXTH20P50P
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Specifications
- Drain-Source Voltage (V)
- -500
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.4500
- Continuous Drain Current @ 25 ℃ (A)
- -20
- Gate Charge (nC)
- 103
- Input Capacitance, CISS (pF)
- 5120
- Thermal resistance [junction-case] (K/W)
- 0.27
- Configuration
- Single
- Package Type
- TO-247
- Typical Reverse Recovery Time (ns)
- 406
- Power Dissipation (W)
- 460
- Sample capable
- Yes
- StockCheck
- No
Documenti
Data Sheet
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