Littelfuse

IXTX60N50L2

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Descrizione

Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. IXYS LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C.
Part Number
IXTX60N50L2
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Specifications

Drain-Source Voltage (V)
500
Maximum On-Resistance @ 25 ℃ (Ohm)
0.100
Continuous Drain Current @ 25 ℃ (A)
60
Gate Charge (nC)
610
Input Capacitance, CISS (pF)
24000
Thermal resistance [junction-case] (K/W)
0.13
Configuration
Single
Package Type
PLUS247™
Typical Reverse Recovery Time (ns)
980
Power Dissipation (W)
960
Sample capable
Yes
StockCheck
No

Documenti

Data Sheet

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