Littelfuse
IXXN340N65B4
1 / 1
Descrizione
Developed using our proprietory XPT™ thin-wafer technology and state-of-the-art 4th generation (GenX4™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA). These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.- Part Number
- IXXN340N65B4
- Ottenete termini di pagamento fino a 90 giorni da 500+ fornitori.
- Sconti sulla rivendita fino al 40%!
Invia una richiesta di prezzo
1
Metodi di pagamento:
Specifications
- VCES - Collector-Emitter Voltage (V)
- 650
- Collector Current @ 25 ℃ (A)
- 520
- VCE(sat) - Collector-Emitter Saturation Voltage (V)
- 1.70
- Fall Time [Inductive Load] (ns)
- 80
- Thermal resistance [junction-case] [IGBT] (K/W)
- 0.100
- Configuration
- Single
- Package Type
- SOT-227
- Collector Current @ 90 ℃ (A)
- 340
- Turn-off Energy @ 150 ℃ (mJ)
- 2.54
- StockCheck
- No
- Sample capable
- No
Documenti
Data Sheet
ScaricareProdotti correlati
Altre categorie
AttuatoriBlocchiCavi, tubi e manichetteCompressoriControlloGiunzioni e raccordiCilindri e PistoniElettronicaFiltriHVACPC industriali e HMIsIlluminazioneTecnica lineareMotoriAlimentatoreTrasmissione di potenzaPompe e ValvoleEnergia rinnovabileRoboticaGuarnizioni, Anelli e ConnettoriSensori e dispositivi di misuraStrumenti e AccessoriCNCAltro