IXTN200N10L2

IXTN200N10L2 - L2™ Series

IXTN200N10L2

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Specifications

Drain-Source Voltage (V): 100
Maximum On-Resistance @ 25 ℃ (Ohm): 0.011
Continuous Drain Current @ 25 ℃ (A): 178
Gate Charge (nC): 540
Input Capacitance, CISS (pF): 23000
Thermal resistance [junction-case] (K/W): 0.15
Configuration: Single
Package Type: SOT-227
Typical Reverse Recovery Time (ns): 245
Power Dissipation (W): 830
Sample capable: Yes
StockCheck: No

Documents

Data Sheet

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