MMIX1F180N25T

MMIX1F180N25T - HiPerFET™ and MOSFET Series

MMIX1F180N25T

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Specifications

Drain-Source Voltage (V): 250
Maximum On-Resistance @ 25 ℃ (Ohm): 0.01300
Continuous Drain Current @ 25 ℃ (A): 132
Gate Charge (nC): 364
Input Capacitance, CISS (pF): 23800.0
Thermal resistance [junction-case] (K/W): 0.22
Configuration: Single
Package Type: SMPD
Power Dissipation (W): 570
Maximum Reverse Recovery (ns): 200
Sample capable: No
StockCheck: No

Documents

Data Sheet

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