NM-EFE3AA/NM-EFE3AA-D

Specifications

Model ID

APX300

Model No.

NM-EFE3AA

Plasma Source

ICP Plasma

Process Gas

4 Lines (standard) (Maximum 6 Lines - Chlorinated Gas, Fluoride Gas, Ar, O2, He, etc.)

Wafer Size *

φ100 mm wafer with orientation flat (standard)

Dimensions (mm)

W 1,350 × D 2,230 × H 2,000 (Does not include touch panels, operation section and signal tower)

Mass

2,100 kg (differs depending on machine configuration)

Power Source *

3-phase AC 200 / 208 / 220 / 230 / 240 ±10 V, 50 / 60 Hz, 21.00 kVA

Pneumatic Source

0.5 MPa to 0.7 MPa, 250 L/min (A.N.R.)

N2 Source

0.1 MPa to 0.2 MPa, 50 L/min (A.N.R.)

Model No.

NM-EFE3AA-D

Wafer Size

φ100mm / 150mm wafer with orientation flat φ200mm wafer with notch

Dimensions (mm)

[Load lock wafer Handling] W 1,350 x D 2,230 x H 2,000 (Exclude touch panel, operation section and signal tower)

Mass

2,000 kg (Differs depending on machine configuration)

Power Source

3-phase AC 200 / 208 / 220 / 230 / 240 ±10 V, 50 / 60Hz, 21.00kVA

Pneumatic Source

0.5MPa to 0.7MPa, 250L/min (A.N.R.)

N2 Source

0.1MPa to 0.2MPa, 50L/min (A.N.R.)

Documents