Onsemi 2N7002LT1G

The onsemi 2N7002L N-Channel MOSFET is a versatile and compact transistor designed for a wide range of applications. Featuring a drain-source breakdown voltage (Vds) of 60V and a continuous drain current (Id) of 115mA, this MOSFET is ideal for low-power switching and amplification tasks. Its enhancement mode operation ensures efficient performance, while the low Rds(on) of 7.5 Ohms minimizes power loss.

With a gate-source voltage (Vgs) range of -20V to +20V and a gate-source threshold voltage (Vgs(th)) of 1V, the 2N7002L offers reliable switching characteristics. The device's typical turn-on and turn-off delay times of 20ns and 40ns, respectively, enable fast response in high-speed circuits.

Designed for surface-mount technology, the 2N7002L comes in a SOT-23-3 package, making it suitable for compact PCB layouts. It operates over a wide temperature range from -55°C to +150°C, ensuring durability in various environmental conditions. The MOSFET's power dissipation (Pd) of 300mW further enhances its reliability in demanding applications.

This MOSFET is compliant with RoHS standards, ensuring it meets environmental and safety regulations. It is available in various packaging options, including reel, cut tape, and MouseReel, providing flexibility for different manufacturing needs.