Littelfuse
IXBP5N160G
1 / 1
Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non- epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.- Part Number
- IXBP5N160G
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Specifications
- VCES - Collector-Emitter Voltage (V)
- 1600
- Collector Current @ 25 ℃ (A)
- 5.7
- VCE(sat) - Collector-Emitter Saturation Voltage (V)
- 4.90
- Fall Time [Resistive Load] (ns)
- 70
- Thermal resistance [junction-case] (K/W)
- 1.85
- Configuration
- Copack (FRED)
- Package Type
- TO-220
- Collector Current @ 90 ℃ (A)
- 3.5
- Driving Voltages (V)
- 10
- StockCheck
- No
- Sample capable
- No
Documents
Data Sheet
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