Littelfuse
IXFH60N60X2A
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Description
The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency.- Part Number
- IXFH60N60X2A
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Specifications
- Drain-Source Voltage (V)
- 600
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.052
- Continuous Drain Current @ 25 ℃ (A)
- 60
- Gate Charge (nC)
- 108
- Input Capacitance, CISS (pF)
- 6300
- Thermal resistance [junction-case] (K/W)
- 0.16
- Configuration
- Single
- Package Type
- TO-247
- Typical Reverse Recovery Time (ns)
- 180
- Power Dissipation (W)
- 780
- Sample capable
- No
- StockCheck
- No
Documents
Data Sheet
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