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IXFP4N100QM

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Description

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.
Part Number
IXFP4N100QM
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Specifications

Drain-Source Voltage (V)
1000
Maximum On-Resistance @ 25 ℃ (Ohm)
3.00
Continuous Drain Current @ 25 ℃ (A)
2.2
Gate Charge (nC)
43.5
Input Capacitance, CISS (pF)
1185
Thermal resistance [junction-case] (K/W)
2.70
Configuration
Single
Package Type
TO-220 OVERMOLDED
Power Dissipation (W)
46
Maximum Reverse Recovery (ns)
250
Sample capable
No
StockCheck
No

Documents

Data Sheet

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