Littelfuse
IXFT120N25X3HV
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Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.- Part Number
- IXFT120N25X3HV
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Specifications
- Drain-Source Voltage (V)
- 250
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.012
- Continuous Drain Current @ 25 ℃ (A)
- 120
- Gate Charge (nC)
- 122
- Input Capacitance, CISS (pF)
- 7870
- Thermal resistance [junction-case] (K/W)
- 0.26
- Configuration
- Single
- Package Type
- TO-268HV
- Typical Reverse Recovery Time (ns)
- 140
- Power Dissipation (W)
- 480
- Sample capable
- Yes
- StockCheck
- No
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Data Sheet
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