Littelfuse
IXGH48N60B3C1
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Description
GenX3TM IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3TM IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3TM are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3TM utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost.- Part Number
- IXGH48N60B3C1
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Specifications
- VCES - Collector-Emitter Voltage (V)
- 600
- Collector Current @ 25 ℃ (A)
- 75
- VCE(sat) - Collector-Emitter Saturation Voltage (V)
- 1.8
- Fall Time [Inductive Load] (ns)
- 116
- Thermal resistance [junction-case] [IGBT] (K/W)
- 0.42
- Configuration
- Copack (SiC)
- Package Type
- TO-247
- Turn-off Energy @ 125 ℃ (mJ)
- 1.30
- Collector Current @ 110 ℃ (A)
- 48
- Thermal resistance [junction-case] [Diode] (K/W)
- 0.90
- Forward Current @ 110 ℃ (A)
- 20
- StockCheck
- No
- Sample capable
- No
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Data Sheet
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