Littelfuse

IXKC25N80C

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Description

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.
Part Number
IXKC25N80C
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Specifications

Drain-Source Voltage (V)
800
Maximum On-Resistance @ 25 ℃ (Ohm)
0.150
Continuous Drain Current @ 25 ℃ (A)
25
Gate Charge (nC)
180
Input Capacitance, CISS (pF)
4600
Thermal resistance [junction-case] (K/W)
0.50
Configuration
Single
Package Type
ISOPLUS220™
Typical Reverse Recovery Time (ns)
550
Power Dissipation (W)
140
Isolated Tab RMS Voltage (V)
2500
Sample capable
No
StockCheck
No

Documents

Data Sheet

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