Littelfuse
IXKR25N80C
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Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.- Part Number
- IXKR25N80C
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Specifications
- Drain-Source Voltage (V)
- 800
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.150
- Continuous Drain Current @ 25 ℃ (A)
- 25
- Gate Charge (nC)
- 180
- Input Capacitance, CISS (pF)
- 4600
- Thermal resistance [junction-case] (K/W)
- 0.50
- Configuration
- Single
- Package Type
- PLUS247™
- Power Dissipation (W)
- 250
- Maximum Reverse Recovery (ns)
- 550
- Isolated Tab RMS Voltage (V)
- 2500
- Sample capable
- No
- StockCheck
- No
Documents
Data Sheet
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