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IXTA120P065T

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Description

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.
Part Number
IXTA120P065T
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Availability:
295 pcs.
In-Stock
Updated at: 08-11-2024
Estimated Delivery:
On Request
Condition:
New Factory Sealed
New Factory Sealed - A brand-new, unused, unopened, undamaged item in its original manufacturer-sealed packaging.
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Specifications

Drain-Source Voltage (V)
-65
Maximum On-Resistance @ 25 ℃ (Ohm)
0.0100
Continuous Drain Current @ 25 ℃ (A)
-120
Gate Charge (nC)
185
Input Capacitance, CISS (pF)
13200
Thermal resistance [junction-case] (K/W)
0.42
Configuration
Single
Package Type
TO-263
Typical Reverse Recovery Time (ns)
53
Power Dissipation (W)
298
Sample capable
No
StockCheck
No

Documents

Data Sheet

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