Littelfuse
IXTA1R6N50D2
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Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance).- Part Number
- IXTA1R6N50D2
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Specifications
- Drain-Source Voltage (V)
- 500
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 2.3
- Continuous Drain Current @ 25 ℃ (A)
- 1.6
- Gate Charge (nC)
- 23.7
- Input Capacitance, CISS (pF)
- 645
- Thermal resistance [junction-case] (K/W)
- 1.25
- Configuration
- Single
- Package Type
- TO-263
- Power Dissipation (W)
- 100
- Max Off-state Gate-Source Voltage (V)
- -4.5
- Reverse Transfer Capacitance, CRSS (pF)
- 16.5
- Sample capable
- No
- StockCheck
- No
Documents
Data Sheet
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