Littelfuse
IXTA26P10T
1 / 1
Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.- Part Number
- IXTA26P10T
- Get up to 90 days payment terms from 500+ suppliers
- Reselling discounts up to 40%!
Send request for price
1
Payment methods:
Specifications
- Drain-Source Voltage (V)
- -100
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.0900
- Continuous Drain Current @ 25 ℃ (A)
- -26
- Gate Charge (nC)
- 52
- Input Capacitance, CISS (pF)
- 3820
- Thermal resistance [junction-case] (K/W)
- 0.83
- Configuration
- Single
- Package Type
- TO-263
- Typical Reverse Recovery Time (ns)
- 70
- Power Dissipation (W)
- 150
- Sample capable
- No
- StockCheck
- No
Documents
Data Sheet
DownloadRelated products
Other Categories
ActuatorsBlocksCables, Pipes & HosesCompressorsControlCouplings & FittingsCylinders & PistonsElectronicsFiltersHVACIndustrial PC's & HMIsLightingLinear techniqueMotorsPower SupplyPower TransmissionPumps & ValvesRenewable energyRoboticsSeals, Rings & ConnectorsSensors & Measuring DevicesTools and AccessoriesCNCOther