Littelfuse
IXTH110N25T
1 / 1
Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.- Part Number
- IXTH110N25T
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Specifications
- Drain-Source Voltage (V)
- 250
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.026
- Continuous Drain Current @ 25 ℃ (A)
- 110
- Gate Charge (nC)
- 157
- Input Capacitance, CISS (pF)
- 9400
- Thermal resistance [junction-case] (K/W)
- 0.18
- Configuration
- Single
- Package Type
- TO-247
- Typical Reverse Recovery Time (ns)
- 170
- Power Dissipation (W)
- 694
- Sample capable
- No
- StockCheck
- No
Documents
Data Sheet
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