Littelfuse
IXTP32P05T
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Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.- Part Number
- IXTP32P05T
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Specifications
- Drain-Source Voltage (V)
- -50
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.0390
- Continuous Drain Current @ 25 ℃ (A)
- -32
- Gate Charge (nC)
- 46
- Input Capacitance, CISS (pF)
- 1975
- Thermal resistance [junction-case] (K/W)
- 1.50
- Configuration
- Single
- Package Type
- TO-220
- Typical Reverse Recovery Time (ns)
- 26
- Power Dissipation (W)
- 83
- Sample capable
- Yes
- StockCheck
- No
Documents
Data Sheet
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