Littelfuse
IXTP4N70X2M
1 / 1
Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).- Part Number
- IXTP4N70X2M
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Specifications
- Drain-Source Voltage (V)
- 700
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.850
- Continuous Drain Current @ 25 ℃ (A)
- 4.00
- Gate Charge (nC)
- 11.8
- Input Capacitance, CISS (pF)
- 386
- Thermal resistance [junction-case] (K/W)
- 4.16
- Configuration
- Single
- Package Type
- TO-220 OVERMOLDED
- Typical Reverse Recovery Time (ns)
- 186
- Power Dissipation (W)
- 30
- Sample capable
- No
- StockCheck
- No
Documents
Data Sheet
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