Littelfuse
IXTQ180N10T
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.- Part Number
- IXTQ180N10T
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Specifications
- Drain-Source Voltage (V)
- 100
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.0064
- Continuous Drain Current @ 25 ℃ (A)
- 180
- Gate Charge (nC)
- 151
- Input Capacitance, CISS (pF)
- 6900
- Thermal resistance [junction-case] (K/W)
- 0.31
- Configuration
- Single
- Package Type
- TO-3P
- Typical Reverse Recovery Time (ns)
- 100
- Power Dissipation (W)
- 480
- Sample capable
- Yes
- StockCheck
- No
Documents
Data Sheet
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