Littelfuse
IXTR120P20T
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Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.- Part Number
- IXTR120P20T
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Specifications
- Drain-Source Voltage (V)
- -200
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.0320
- Continuous Drain Current @ 25 ℃ (A)
- -90
- Gate Charge (nC)
- 740
- Input Capacitance, CISS (pF)
- 73000
- Thermal resistance [junction-case] (K/W)
- 0.21
- Configuration
- Single
- Package Type
- PLUS247™
- Power Dissipation (W)
- 595
- Maximum Reverse Recovery (ns)
- 300
- Sample capable
- No
- StockCheck
- No
Documents
Data Sheet
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