Littelfuse
IXTT240N15X4HV
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Description
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.- Part Number
- IXTT240N15X4HV
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Specifications
- Drain-Source Voltage (V)
- 150
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.0044
- Continuous Drain Current @ 25 ℃ (A)
- 240
- Thermal resistance [junction-case] (K/W)
- 0.16
- Configuration
- Single
- Package Type
- TO-268HV
- Power Dissipation (W)
- 940
- Sample capable
- No
- StockCheck
- No
Documents
Data Sheet
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