Littelfuse

IXTT60N20L2

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Description

Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. IXYS LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C.
Part Number
IXTT60N20L2
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Specifications

Drain-Source Voltage (V)
200
Maximum On-Resistance @ 25 ℃ (Ohm)
0.045
Continuous Drain Current @ 25 ℃ (A)
60
Gate Charge (nC)
255
Input Capacitance, CISS (pF)
10500
Thermal resistance [junction-case] (K/W)
0.23
Configuration
Single
Package Type
TO-268
Typical Reverse Recovery Time (ns)
330
Power Dissipation (W)
540
Sample capable
No
StockCheck
No

Documents

Data Sheet

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