Littelfuse
IXTX200N10L2
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Description
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. IXYS LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C.- Part Number
- IXTX200N10L2
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Specifications
- Drain-Source Voltage (V)
- 100
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.011
- Continuous Drain Current @ 25 ℃ (A)
- 200
- Gate Charge (nC)
- 540
- Input Capacitance, CISS (pF)
- 23000
- Thermal resistance [junction-case] (K/W)
- 0.12
- Configuration
- Single
- Package Type
- PLUS247™
- Typical Reverse Recovery Time (ns)
- 245
- Power Dissipation (W)
- 1040
- Sample capable
- No
- StockCheck
- No
Documents
Data Sheet
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