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IXTY1N100P

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Description

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients.
Part Number
IXTY1N100P
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Specifications

Drain-Source Voltage (V)
1000
Maximum On-Resistance @ 25 ℃ (Ohm)
15.000
Continuous Drain Current @ 25 ℃ (A)
1.0
Gate Charge (nC)
15.5
Input Capacitance, CISS (pF)
331
Thermal resistance [junction-case] (K/W)
2.50
Configuration
Single
Package Type
TO-252
Typical Reverse Recovery Time (ns)
750
Power Dissipation (W)
50
Sample capable
No
StockCheck
No

Documents

Data Sheet

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