Littelfuse

IXUV170N075S

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Description

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.
Part Number
IXUV170N075S
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Specifications

Drain-Source Voltage (V)
75
Maximum On-Resistance @ 25 ℃ (Ohm)
0.0053
Continuous Drain Current @ 25 ℃ (A)
175
Gate Charge (nC)
310
Thermal resistance [junction-case] (K/W)
0.5
Configuration
Single
Package Type
PLUS220
Typical Reverse Recovery Time (ns)
120
Power Dissipation (W)
300
Sample capable
No
StockCheck
No

Documents

Data Sheet

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