Littelfuse
IXXX200N65B4
1 / 1
Description
Developed using our proprietory XPT™ thin-wafer technology and state-of-the-art 4th generation (GenX4™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA). These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.- Part Number
- IXXX200N65B4
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Specifications
- VCES - Collector-Emitter Voltage (V)
- 650
- Collector Current @ 25 ℃ (A)
- 480
- VCE(sat) - Collector-Emitter Saturation Voltage (V)
- 1.70
- Fall Time [Inductive Load] (ns)
- 80
- Thermal resistance [junction-case] [IGBT] (K/W)
- 0.092
- Configuration
- Single
- Package Type
- PLUS247™
- Turn-off Energy @ 150 ℃ (mJ)
- 2.54
- Collector Current @ 110 ℃ (A)
- 200
- StockCheck
- No
- Sample capable
- Yes
Documents
Data Sheet
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