Littelfuse

IXYH40N120B3D1

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Description

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light PunchThrough (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. In addition to being avalanche rated, these devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications.
Part Number
IXYH40N120B3D1
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Specifications

VCES - Collector-Emitter Voltage (V)
1200
Collector Current @ 25 ℃ (A)
86
VCE(sat) - Collector-Emitter Saturation Voltage (V)
2.90
Fall Time [Inductive Load] (ns)
183
Thermal resistance [junction-case] [IGBT] (K/W)
0.260
Configuration
Copack (FRED)
Package Type
TO-247
Turn-off Energy @ 150 ℃ (mJ)
2.05
Collector Current @ 110 ℃ (A)
40
Thermal resistance [junction-case] [Diode] (K/W)
0.90
Forward Current @ 110 ℃ (A)
25
StockCheck
No
Sample capable
Yes

Documents

Data Sheet

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