Littelfuse

IXYP20N65C3D1

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Description

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light PunchThrough (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. In addition to being avalanche rated, these devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications.
Part Number
IXYP20N65C3D1
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Availability:
110 pcs.
In-Stock
Updated at: 08-11-2024
Estimated Delivery:
On Request
Condition:
New Factory Sealed
New Factory Sealed - A brand-new, unused, unopened, undamaged item in its original manufacturer-sealed packaging.
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Specifications

VCES - Collector-Emitter Voltage (V)
650
Collector Current @ 25 ℃ (A)
50
VCE(sat) - Collector-Emitter Saturation Voltage (V)
2.50
Fall Time [Inductive Load] (ns)
28
Thermal resistance [junction-case] [IGBT] (K/W)
0.650
Configuration
Copack (FRED)
Package Type
TO-220
Turn-off Energy @ 150 ℃ (mJ)
0.40
Collector Current @ 110 ℃ (A)
20
Thermal resistance [junction-case] [Diode] (K/W)
1.85
Forward Current @ 110 ℃ (A)
18
StockCheck
No
Sample capable
No

Documents

Data Sheet

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