Littelfuse
IXYX50N170C
1 / 1
Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI).- Part Number
- IXYX50N170C
- Get up to 90 days payment terms from 500+ suppliers
- Reselling discounts up to 40%!
Send request for price
1
Payment methods:
Specifications
- VCES - Collector-Emitter Voltage (V)
- 1700
- Collector Current @ 25 ℃ (A)
- 178
- VCE(sat) - Collector-Emitter Saturation Voltage (V)
- 3.70
- Fall Time [Inductive Load] (ns)
- 95
- Thermal resistance [junction-case] [IGBT] (K/W)
- 0.10
- Configuration
- Single
- Package Type
- PLUS247™
- Turn-off Energy @ 150 ℃ (mJ)
- 8.20
- Collector Current @ 110 ℃ (A)
- 50
- StockCheck
- No
- Sample capable
- No
Documents
Data Sheet
DownloadRelated products
Other Categories
ActuatorsBlocksCables, Pipes & HosesCompressorsControlCouplings & FittingsCylinders & PistonsElectronicsFiltersHVACIndustrial PC's & HMIsLightingLinear techniqueMotorsPower SupplyPower TransmissionPumps & ValvesRenewable energyRoboticsSeals, Rings & ConnectorsSensors & Measuring DevicesTools and AccessoriesCNCOther