Littelfuse
MG12150D-BA1MM
1 / 1
Description
Littelfuse Half-Bridge Circuit IGBT Modules, available in industry-standard S, D, or WB packages with ratings up to 1200V and 600A, offer high efficiency and fast switching speeds by combining simple MOSFET gate-drive with the high current and low saturation voltage switching capability of bipolar transistors. Both standard and customized solutions are available to meet circuit designers’ exacting performance standards. Features- Part Number
- MG12150D-BA1MM
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Specifications
- VCES - Collector-Emitter Voltage (V)
- 1200
- VCE(sat) - Collector-Emitter Saturation Voltage (V)
- 1.8
- Mounting Method
- Screw
- Package Type
- bulk
- Eoff - Turn-off Energy (mJ)
- 9.8
- RoHS
- YES
- Package Size
- Package D: 108 x 62 x 30 (mm)
- RthJC - Junction-to-Case Thermal Resistance (Per IGBT) (K/W)
- 0.11
- Topology
- circuit B
- Ptot - Power Dissipation Per IGBT (W)
- 1100
- UL Recognized File Number
- E71639
- StockCheck
- Yes
- Sample capable
- Yes
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