Littelfuse
IXFN32N100Q3
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Description
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device.- Part Number
- IXFN32N100Q3
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Specifications
- Drain-Source Voltage (V)
- 1000
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.320
- Continuous Drain Current @ 25 ℃ (A)
- 28
- Gate Charge (nC)
- 195
- Input Capacitance, CISS (pF)
- 10900
- Thermal resistance [junction-case] (K/W)
- 0.160
- Configuration
- Single
- Package Type
- SOT-227
- Power Dissipation (W)
- 780
- Maximum Reverse Recovery (ns)
- 300
- Sample capable
- No
- StockCheck
- No
Documents
Data Sheet
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