Littelfuse
IXFN90N85X
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Description
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).- Part Number
- IXFN90N85X
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Specifications
- Drain-Source Voltage (V)
- 850
- Maximum On-Resistance @ 25 ℃ (Ohm)
- 0.041
- Continuous Drain Current @ 25 ℃ (A)
- 90.0
- Gate Charge (nC)
- 340
- Input Capacitance, CISS (pF)
- 13300
- Thermal resistance [junction-case] (K/W)
- 0.104
- Configuration
- Single
- Package Type
- SOT-227
- Typical Reverse Recovery Time (ns)
- 250
- Power Dissipation (W)
- 1200
- Sample capable
- Yes
- StockCheck
- No
Documents
Data Sheet
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