Littelfuse
IXYA12N250CHV
1 / 1
Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI).- Part Number
- IXYA12N250CHV
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Specifications
- VCES - Collector-Emitter Voltage (V)
- 2500
- Collector Current @ 25 ℃ (A)
- 28
- VCE(sat) - Collector-Emitter Saturation Voltage (V)
- 4.50
- Fall Time [Inductive Load] (ns)
- 136
- Thermal resistance [junction-case] [IGBT] (K/W)
- 0.48
- Configuration
- Single
- Package Type
- TO-263HV
- Turn-off Energy @ 150 ℃ (mJ)
- 1.95
- Collector Current @ 110 ℃ (A)
- 12
- StockCheck
- No
- Sample capable
- No
Documents
Data Sheet
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