Littelfuse
NGB8245NT4G
1 / 1
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or whatever high voltage and high current switching is required.- Part Number
- NGB8245NT4G
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Specifications
- Collector-Emitter Clamp Voltage TYP BVCES@IC (V)
- 450
- Collector Current-Continuous ICmax (A)
- 20
- VCE(sat) - Collector-Emitter Saturation Voltage (V)
- 1.1
- EAS - Single Pulse Collector-to-Emitter Avalanche Energy
- 158
- Max Power Dissipation (W)
- 150
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